| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with an insulating film comprising a silicon nitride film which does not degrade a conductive layer composed of metal silicide, and to provide a method for manufacturing the device. SOLUTION: The insulating film 10 mainly composed of the silicon nitride film uniformly containing carbon is formed on the conductive layer 9 composed of the metal silicide such as nickel silicide. The silicon nitride film containing carbon is deposited by the reaction of species nitride and a silicon source. Since hexa-methyl disilane used as the silicon source is provided with a methyl group, the silicon nitride film formed by the reaction contains carbon and hydrogen. When the methyl group is contained, the film itself becomes sparse to lower a dielectric constant to suppress the deceleration of a transistor called RC delay. By using the silicon nitride film containing carbon, the conductive layer composed of the metal silicide is not degraded during a process. As the silicon source, an amino group, an amino group having a carbonized substance as a free radical, etc. are also used. COPYRIGHT: (C)2004,JPO |
