SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a MOSFET semiconductor device having a gate trench which can easily be manufactured, and to provide a manufacturing method of the device. SOLUTION: In the semiconductor device 100, n+-type source regions 105 are formed in the gate trenches 110 formed in stripe shapes. Only a p-type body layer 103 and a P+-type diffusion region 104 are formed in a mesa between the gate trenches 110. When the device is compared with a semiconductor device of a conventional technology, a structure of the mesa becomes considerably simpler, and the semiconductor device 100 can easily be reduced by reducing a mesa width. COPYRIGHT: (C)2004,JPO