| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which a highly reliable thin film transistor having good characteristics, e.g. mobility, can be obtained even when it is formed while including a starting point of crystal having a large grain size. SOLUTION: A thin film transistor comprises a gate electrode 22, a source region 24, a drain region 25 and a channel region 26. The channel region 26 is formed along the channel width direction (W direction) across a plurality of silicon films (substantially, single crystal grain). A specified region prone to have disturbance in crystallinity including a starting point (referred to "grain filter") 52 of crystallization is removed from a silicon film 16 employed for forming the channel region 26, and the like. A specified region including a grain boundary 54 is also removed from the silicon film 16. COPYRIGHT: (C)2004,JPO
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