| 摘要 |
PROBLEM TO BE SOLVED: To provide wiring in which wire breakage is suppressed in a fine connecting hole when the wiring is formed, and to provide its manufacturing method, a semiconductor device and its manufacturing method. SOLUTION: The method for manufacturing a semiconductor device comprises a step for forming an insulating film 2 on an underlying film 1, a step for forming a connecting hole 2a through the insulating film 2 at a position above the underlying film 1, a step for forming a Ti layer 3 in the connecting hole and on the insulating film 2 and forming a TiN layer 4 on the Ti layer 3, a step for forming micro protrusions and recesses on/in the surface of the TiN layer 4 by plasma etching, a step for forming an Al alloy layer 5a on the TiN layer and in the connecting hole, a step for forming micro protrusions and recesses on/in the surface of the Al alloy layer 5a by plasma etching, and a step for forming an Al alloy layer 5b on the Al alloy layer 5a and in the connecting hole. COPYRIGHT: (C)2004,JPO
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