发明名称 IMPROVED POLYCRYSTALLINE TFT UNIFORMITY THROUGH MICROSTRUCTURE MIS- ALIGNMENT
摘要 <p>Methods of making a polycrystalline silicon thin-film transistor having a uniform microstructure. One exemplary method requires receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction, and placing at least portions ( 410, 420 ) of one or more thin-film transistors on the received film such that they are tilted relative to the periodic structure of the thin film.</p>
申请公布号 KR20040036739(A) 申请公布日期 2004.04.30
申请号 KR20047002791 申请日期 2002.08.27
申请人 发明人
分类号 H01L21/20;H01L29/786;C30B13/00;C30B13/24;C30B29/06;H01L21/336 主分类号 H01L21/20
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