| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a composition for polishing, having a sufficiently large polishing rate of a tantalum compound compared to that of copper and substantially hardly causing polishing of SiO<SB>2</SB>in a CMP processing process of a semiconductor device having a copper film, a barrier layer of the tantalum compound and an insulation layer of the SiO<SB>2</SB>. <P>SOLUTION: The composition for the polishing is obtained by mixing a colloidal silica containing primary particles having 30 nm average particle diameter as a polishing material, a polymethyl methacrylate having 30 nm average particle diameter and 2.9 dielectric constant at 23°C at 1 MHz, oxalic acid, hydrogen peroxide and benzotriazole with ion-exchanged water filtered by a 0.5μm cartridge filter, and stirring the resultant mixture by a high-speed homogenizer to provide homogeneous dispersion. <P>COPYRIGHT: (C)2004,JPO</p> |
