| 摘要 |
PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method thereof are provided to be capable of minimizing the voltage drop due to the threshold voltage of a native NMOSFET and restraining the deterioration of the threshold voltage. CONSTITUTION: A CMOS image sensor is provided with a photo diode(27,33) for generating and storing photo-generated charges, a floating diffusion region for storing the photo-generated charges transmitted from the photo diode and being sensed, and a transfer transistor connected with the photo diode through its one side and the floating diffusion region through its the other side. The CMOS image sensor further includes a reset transistor connected with the floating diffusion region through its one side and a voltage supply terminal through its other side. At this time, the transfer transistor and the reset transistor are native MOS transistors. At the time, the transfer transistor and the reset transistor have an LDD(Lightly Doped Drain) region at their predetermined portion, respectively.
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