| 摘要 |
PURPOSE: A method for manufacturing an image sensor using a salicide process is provided to be capable of preventing a salicide layer from being formed at a photo diode region and simultaneously forming the salicide layer on a gate electrode of a transistor. CONSTITUTION: A gate electrode(25) is formed on a selected region of a semiconductor layer. An insulating spacer is formed at both sidewalls of the gate electrode. A photo diode is formed at one side of the gate electrode in the semiconductor layer. A floating diffusion region(29) is formed at the other side of the gate electrode in the semiconductor layer. A salicide barrier(30b) is formed on the resultant structure. At this time, the gate electrode and the floating diffusion region are opened to the outside. A plurality of salicide layers(35a,35b) are formed on the gate electrode and the floating diffusion region, respectively.
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