发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To make image quality uniform by suppressing the influences of a voltage drop due to wiring resistance in a display device, and moreover, to improve the operational speed of a drive circuit by suppressing the delay of wiring providing electrical connection between the drive circuit and input/output terminals. SOLUTION: As wiring used for a semiconductor device, wiring containing copper for enabling reduction in wiring resistance is made minute and used. A conductive film of a barrier nature (referred to as barrier type conductive film, hereafter) preventing the diffusion of copper is provided between thin-film transistors (represented as TFTs, hereafter), so as to form the wiring containing copper without diffusing copper to the semiconductor layer of the TFT. In addition, the wiring containing copper is wiring comprising a laminated film of the conductive film having copper as a main component and the barrier type conductive film having a barrier nature to the diffusion of copper, and is subjected to microfabrication for reducing the line width of the conductive film having copper as the main component. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004134788(A) 申请公布日期 2004.04.30
申请号 JP20030326611 申请日期 2003.09.18
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;OSAME MITSUAKI
分类号 H01L51/50;H01L21/28;H01L21/3205;H01L23/52;H01L29/786;H05B33/14;(IPC1-7):H01L21/320 主分类号 H01L51/50
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