| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which has high channel mobility without deteriorating an insulation voltage of a gate insulating film. SOLUTION: The silicon carbide semiconductor device is provided with base regions 3a, 3b formed on the surface of an epitaxial layer 2 formed on a silicon carbide semiconductor substrate 1, source regions 4a, 4b formed on surface layers of the base regions 3a, 3b, and a gate insulating film 6 which is so formed on channel regions 5a, 5b that the channel regions 5a, 5b are formed in the base regions 3a, 3b between the source regions 4a, 4b and the epitaxial layer 2. In the silicon carbide semiconductor device, a semiconductor layer 12 whose band gap is different from that of silicon carbide is formed between the gate insulating film 6 and the channel regions 5a, 5b. COPYRIGHT: (C)2004,JPO
|
