| 摘要 |
PROBLEM TO BE SOLVED: To enhance the adjusting accuracy to the eccentricity of a susceptor by making the eccentric amount of the susceptor quantitatively measurable, thereby improving the uniformity of the in-plane distribution of thickness or crystal composition of a film formed on a semiconductor substrate. SOLUTION: A vertical organic metal vapor growth apparatus 101 is constituted of a reactor 2 having an opening at the bottom, a susceptor 4 which is arranged inside the susceptor for loading a semiconductor substrate 3, a rotating shaft 5 which is continuously formed with the susceptor 4 and rotatable by a driving part, a gas supplying hole 7 which is arranged at the top of the reactor 2 for supplying various gases such as material gas 6 to the inside of the reactor 2, a gas exhaust hole 8 for exhausting reacted gas or the like to the outside of the reactor 2, a flange 9 for sealing the opening at the bottom of the reactor 2 via an O-ring, an electromagnetic induction heating coil 10 arranged outside the reactor 2, and an eccentric amount measuring part 102 for measuring the eccentric amount of the susceptor 4 when the susceptor 4 is rotating. COPYRIGHT: (C)2004,JPO
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