| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which enhancements of characteristics and isolation particularly as a basic element of an FET can be obtained simultaneously. SOLUTION: The spreading of a depletion layer is suppressed by forming a heavily doped impurity region between a gate electrode and an electrode pad of an FET, a second FET having contiguous wiring, a gate metal layer, and an impurity layer. The alignment accuracy of a mask is enhanced by using an oxide film formed on a source-drain region for aligning the mask of the FET. The basic performance of the FET is enhanced even if the gate width is shrunk, and since a clearance between the FETs can be reduced by shrinking the gate width with characteristics equivalent to conventional characteristics, a 5 GHz switch having enhanced isolation can be obtained. COPYRIGHT: (C)2004,JPO
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