| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming patterns on semiconductor element whereby a phenomenon of destroying photoresist pattern can be prevented. <P>SOLUTION: The method of forming patterns on semiconductor-element includes a step (a) for so baking an organic anti-reflection coating composition after applying it to the top portion of the etched layer of a semiconductor substrate as to form an organic anti-reflection coating, a step (b) for increasing the surface area of the organic anti-reflection coating by so performing an etching process to the formed organic anti-reflection coating as to form fine curvatures (irregularity) on the organic anti-reflection coating, and a step (c) for so applying a photoresist to the top portion of the organic anti-reflection coating as to form a photoresist pattern by developing the photoresist after its exposure. <P>COPYRIGHT: (C)2004,JPO |
