INTERCONNECTION, METHOD FOR FORMING THE INTERCONNECTION, THIN-FILM TRANSISTOR AND INDICATING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming an interconnection which can form the interconnection selectively on a substrate irrespective of the size of the substrate, further can save resources in materials for forming the interconnection, can realize micro-interconnections, and can realize reduction in manufacturing cost due to reduction in the number of manufacturing steps. SOLUTION: There are provided a step of forming a metal spread preventive film 14 on an insulating substrate 13; a step of selectively forming a metal seed layer 18 on the metal spread preventive film 14 by an electroless plating method; a step of selectively forming a metal interconnection layer 20 on the metal seed layer 18 by an electrolytic method; and a step of etching the metal spread preventive film 14 with the metal interconnection layer 20 as a mask. COPYRIGHT: (C)2004,JPO