| 摘要 |
PROBLEM TO BE SOLVED: To apply a technique for forming a fine, high-performance insulating film by eliminating the influence of contraction on a substrate by heat treatment in a manufacturing process in a thin film element, such as a TFT formed on a glass substrate, and to provide a semiconductor device for achieving high performance and superior reliability by using the technique. SOLUTION: In a process for forming the thin-film element composed using the glass substrate for laminating a plurality of thin films, a film for absorbing radiation from a heat source is locally formed at the specific portion of the substrate, on which the thin film element is formed for heat-treating to prevent the substrate from being damaged thermally. In the substrate to be applied, a material that has the low absorption factor of the radiation from the heat source and cannot be heated easily is applied; and the film for absorbing the radiation from the heat source is provided locally on the main surface of the substrate for heat-treatment. Then, a targeted structure is heated by conduction heating from the film for heat-treatment. COPYRIGHT: (C)2004,JPO
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