| 摘要 |
Alloys of the following percentages by weight compositions are used in the preparation of semiconductor devices (see Group XXXVI): 95% silver, 5% lead; 90% silver, 6% lead, 2% tin and 2% antimony. The following etchants are used for preferential removal of damaged parts of the surface of treated germanium wafers: 2 parts by volume hydrofluoric acid, 1 part nitric acid and 2 parts of a 5% by weight silver nitrate solution; 1 part by volume hydrofluoric acid to 4 parts water. The following etches are used for similarly treating silicon: 15 parts by volume acetic acid, 25 parts nitric acid and 15 parts hydrofluoric acid; 10 parts by weight sodium hydroxide to 90 parts of water.
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