| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for forming a resist pattern having a trimming step of novel arrangement. SOLUTION: A resist film 16 is deposited on an underlying film 14 deposited on a wafer 12. A resist material exhibiting such properties as the line width of a resist pattern shrinks through irradiation with an electron beam is used. The resist film is subjected to exposure processing according to a conventional method and then developed to form a resist pattern 18 of a specified line width. Subsequently, the resist pattern 18 is irradiated with an electron beam at an irradiation energy of 100eV-500keV to shrink the line width of the resist pattern 18 thus forming a resist pattern 20 having a shrunk line width. Relation between the level and exposure time of irradiation energy and the shrinkage of line width is established previously, and the level and exposure time of irradiation energy are determined depending on a desired shrinkage width. Finally, the underlying film 14 is etched using the resist pattern 20 having a shrunk line width as a mask thus forming an underlying film pattern 22. COPYRIGHT: (C)2004,JPO |
