| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for removing an organic layer easily and surely using ozone and water vapor without causing any damage on a metal layer. SOLUTION: The process for removing an organic layer comprises steps (a) for feeding a substrate 1 to be processed on which a metal layer and an organic layer are formed into a processing chamber 10, (b) for introducing at least ozone gas and water vapor into the processing chamber 10, and (c) for removing the organic layer by exposing the substrate 1 to be processed to an atmosphere of mixture gas containing at least ozone gas and water vapor. In the step (c), the atmosphere of mixture gas has a volumetric ratio of water vapor to ozone gas (water vapor/ozone gas) in the range of 1-4 and the temperature in the processing chamber 10 is in the range of 95°C-140°C. COPYRIGHT: (C)2004,JPO |
