| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting device which has superior element characteristics and a refractive index distribution which is given through a method different from a conventional one of fabricating a photonics crystal. SOLUTION: This GaN semiconductor laser element 30 is equipped with a refractive index distribution structure which is formed of holes 52 that are laid out in a one-dimensional periodic arrangement and provided to the lower part of a p-type clad layer 46 located by a ridge 50. The holes 52 get gradually larger in diameter and deeper as they are located closer to the ridge 50. The refractive index distribution by the holes 52, which possess different dimensions and are laid out in a one-dimensional periodic arrangement, is formed outside a light emitting region. The GaN semiconductor laser element 30 has a low threshold current because the refractive index distribution by the holes 52 which possess different dimensions and are laid out in a one-dimensional periodic arrangement is formed outside a light emitting region, so that the intensity distribution of a laser beam or NFP can be controlled. COPYRIGHT: (C)2004,JPO
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