| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for depositing a film on a substrate. SOLUTION: In a depositing interval a DC power is so applied to a target as to form a first plasma, and materials are sputtered from the target onto a substrate. During a following formation interval, a high-frequency power is so applied to the target as to remove the materials from at least a portion of the substrate. During the deposition interval, the pressure of a sputtering working gas introduced into a chamber may be kept at a first pressure, and during the formation interval, the pressure of the sputtering working gas may be increased to a second pressure. COPYRIGHT: (C)2004,JPO
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