| 摘要 |
PROBLEM TO BE SOLVED: To improve avalanche resistance in a super junction semiconductor device having such a parallel pn structure that a drift layer is formed by bonding alternately and repeatedly a drift area formed of an n-type semiconductor area with higher impurity concentration and a partitioning area formed of a p-type semiconductor area. SOLUTION: In a parallel junction layer 2 forming the drift layer that allows a current to flow in an ON state and causes depletion in an OFF state, the concentration of a center 211 is higher than that of a side 212 close to a junction surface with an n-type semiconductor area 220 of the parallel pn junction layer 2, with respect to an impurity concentration in the horizontal direction in a p-type semiconductor area 210. In addition, the concentration of the center 221 is higher than that of a side 222 close to a junction surface with the p-type semiconductor area 210 of the parallel pn junction layer 2, with respect to an impurity concentration in the horizontal direction in the n-type semiconductor area 220. In this case, the total impurity quantity of the p-type semiconductor area 210 is made larger than that of the n-type semiconductor area 220. COPYRIGHT: (C)2004,JPO
|
