| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which suppresses the degrading of process precision by reducing the number of increasing patterning processes to half even when multilayer interconnection is advanced, and reducing alignment errors for positioning. SOLUTION: The manufacturing method of the semiconductor device comprises a process of forming an insulating film on a semiconductor substrate, a process of forming a resist film on the insulating film, and a process of irradiating the surface of the resist film with a first electronic beam to expose a first exposing region and irradiating the surface of a resist film adjacent to the first exposing region with a second electronic beam to expose a second exposing region. The method is further provided with a process of separating the first and second exposing regions to form a mask pattern at the resist film and etching the surface of the resist film and a part of the insulating film to form a pattern at the insulating film so as to reach onto the semiconductor substrate, a process of separating the resist film and forming Cu films on the surface of the insulating film and that of the semiconductor substrate so as to embed the resist film, and a process of grinding a part of the Cu film so as to make the Cu film embedded to the pattern remain so that the position of the surface of the insulating film may match with that of the Cu film on the same surface. COPYRIGHT: (C)2004,JPO
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