| 摘要 |
PROBLEM TO BE SOLVED: To integrate a lateral trench power MOSFET and a planar device on the same semiconductor substrate. SOLUTION: In a semiconductor integrated circuit device, a trench 37, a p-type body region 34, an n-type expanded drain region 35, and a thick oxide film 40 are formed sequentially; respective gate oxide films 38, 54, and 64 of a TLPM 101, an NMOS 201, and a PMOS 301 are formed at the same time; and their gate electrodes 39, 55, and 65 are formed at the same time. Further, p-type base regions 32 and 72 of the TLPM 101 and an NPN bipolar transistor 401 are formed at the same time, n-type source/drain regions 33 and 36 of the TLPM 101 and respective n-type diffusion regions 52, 53, 73, and 74 of the NMOS 201 and bipolar transistor 401 are formed at the same time, and p-type diffusion regions 62, 63, and 75 of the PMOS 301 and bipolar transistor 401 are formed at the same time. Then an interlayer oxide film 41 and a contact electrode 42 are formed and respective electrode are formed. COPYRIGHT: (C)2004,JPO
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