| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, i.e. an FET, in which the alignment accuracy of a mask is enhanced particularly in photolithography process. SOLUTION: The alignment accuracy of a mask is enhanced using an oxide film provided on a source-drain region when the mask of an FET is aligned. The basic performance of the FET is enhanced even if a gate width is shrunk and since a clearance between FETs can be reduced while shrinking the gate width with characteristics equivalent to conventional characteristics, a 5 GHz switch having enhanced isolation can be obtained. COPYRIGHT: (C)2004,JPO
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