| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for an EEPROM of a single-layer polysilicon structure which suppresses reduction in the withstand voltage and reliability of a coupling insulating film, readily controls the concentration of a BN layer, and suppresses variation in the thickness of the coupling insulating film in forming the coupling film and a gate insulating film of a memory transistor simultaneously with a gate insulating film of a selection transistor. SOLUTION: The EEPROM semiconductor device has an arrangement wherein the BN layer 5 serving as a control gate is formed in a region for forming a sense transistor, and the BN layer 4 is formed in a region for forming a tunnel film in a semiconductor substrate 1 formed with LOCOS oxide films 2 on its surface. Formation of an ONO film on the surface of the substrate 1 by a CVD method simultaneously provides the coupling insulating film 7, the gate insulating film 8 for the sense transistor, and the gate insulating film 12 for the selection transistor. COPYRIGHT: (C)2004,JPO
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