| 摘要 |
PROBLEM TO BE SOLVED: To provide a level shifter circuit for reducing the manufacturing cost by preventing breakdown of the junction between the gate oxidation layer and the drain junction face. SOLUTION: The level shifter circuit includes at least one or more complementary metal oxide film semiconductor transistors formed on p-type substrate and provided with a p-type metal oxide film semiconductor transistor and an n-type metal oxide film semiconductor transistor. The n-type metal oxide film semiconductor 60 is composed of a gate 62, a drain 66 provided with an n-type well 70 formed on the p-type substrate and a first N+ doping region formed in the n-type well and formed adjacent to the n-type well, and a source 64 having a second N+ doping region formed on the p-type substrate. COPYRIGHT: (C)2004,JPO
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