发明名称 SWITCHING CIRCUIT DEVICE AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem in a lift-off process following to the deposition of a gate metal layer having a thickness of 6,000Åor above that a gate electrode and the gate metal layer on a resist are not cut after lift-off because a narrow gap into which resist removing liquid enters has a long length. SOLUTION: The thickness of the gate metal layer is set at 3,000Åor less. Consequently, resist removing liquid permeates easily and lift-off is facilitated. Since the joint of the gate metal layer and the gate electrode is not required to be torn off by a strong ultrasonic wave, the production of burrs can be prevented. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004134433(A) 申请公布日期 2004.04.30
申请号 JP20020294638 申请日期 2002.10.08
申请人 SANYO ELECTRIC CO LTD 发明人 ASANO TETSUO;NAKAJIMA YOSHIFUMI;ISHIHARA HIDETOSHI
分类号 H01L21/822;H01L21/338;H01L27/04;H01L27/095;H01L29/812;(IPC1-7):H01L21/338 主分类号 H01L21/822
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