| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal wafer good in surface flatness, and a method of producing the same, by which the silicon carbide single crystal can produced stably. SOLUTION: The method of producing the silicon carbide single crystal wafer comprises subjecting a silicon carbide single crystal material obtained by cutting a silicon carbide single crystal to annealing heat treatment at a temperature of≥1,300 and≤2,000°C, and thereafter, subjecting the silicon carbide single crystal material to machinning such as polishing of its surface. COPYRIGHT: (C)2004,JPO
|
