发明名称 MANUFACTURE OF SEMICONDUCTOR VOID GRATING USING SACRIFICIAL LAYER PROCESS
摘要 PROBLEM TO BE SOLVED: To provide an optical device (10) including a first semiconductor layer (12) on which a dielectric layer that is patterned and etched to form dielectric strips (14) as a portion of a diffraction grating layer, is deposited. SOLUTION: Another semiconductor layer (16) is grown on the first semiconductor layer (12) between the dielectric strips (14) to provide alternating dielectric sections (14) and semiconductor sections. In an alternate embodiment, the dielectric layer is deposited on a first semiconductor layer (64) and is patterned and etched to form dielectric strips (66). The semiconductor layer (64) is etched to form openings (68) between the dielectric strips (66). A semiconductor material (70) is grown within the openings (68) and then another semiconductor layer (72) is grown over the entire surface after removing the dielectric strips. Either embodiment may be modified to provide a diffraction grating with air channels. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004133407(A) 申请公布日期 2004.04.30
申请号 JP20030283547 申请日期 2003.07.31
申请人 NORTHROP GRUMMAN CORP 发明人 MICHAEL P NESUNIDARU;FORBES DAVID V
分类号 G02B6/13;G02B5/18;G02B6/122;G02B6/124;H01L21/20;H01S5/12;(IPC1-7):G02B6/13 主分类号 G02B6/13
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