| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which the temperature of the substrate of a semiconductor device can be measured accurately. SOLUTION: While currents I<SB>1</SB>and I<SB>2</SB>are impressed upon a semiconductor diode 13 through a resistor 12, the potential difference V<SB>F1</SB>between both ends of the diode 13 when the current I<SB>1</SB>is made to flow to a circuit, the potential difference V<SB>A1</SB>between both ends of the diode 13 when the resistor 12 is included, the potential difference V<SB>F2</SB>between both ends of the diode 13 when the current I<SB>2</SB>is made to flow to the circuit, and the potential difference V<SB>A2</SB>when the resistor 12 is included, are found. Then the temperature of the substrate is measured by using the formula of T=(q/k)(V<SB>F1</SB>-V<SB>F2</SB>)/1nä(V<SB>A1</SB>-V<SB>F1</SB>)/(V<SB>A2</SB>-V<SB>F2</SB>)} (wherein, T, k, and q respectively denote the absolute temperature, Boltzmann's constant, and electric charges of electrons). COPYRIGHT: (C)2004,JPO |
