| 摘要 |
PURPOSE: A compound semiconductor laser diode is provided to reduce a threshold current and to improve a horizontal/vertical emission aspect ratio and to reduce the generation of kink in a L-I(Light-Current) curve, and to prevent thermal problem and to improve the characteristics of the device. CONSTITUTION: An n-compound semiconductor layer(111) is formed on an n-compound semiconductor substrate(110). The first stacked epi layer is formed by stacking an n-clad layer(112) and an n-waveguide layer(113) and an active layer(114) and an etch stop layer(115) and a p-waveguide layer(116) in a ridge type on the n-compound semiconductor layer in sequence. The second stacked epi layer is formed by stacking a p-clad layer(117) and a p-cap layer(118) on the p-waveguide layer in a ridge type with a smaller area than the first stacked epi layer. A dielectric film(170) is formed on the n-compound semiconductor substrate, as surrounding sides of the first and the second stacked epi layer. A p-metal layer(120) is formed on the p-cap layer and the dielectric layer. An n-metal layer(121) is formed below the n-compound semiconductor substrate.
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