发明名称 |
Semiconductor transistor using L-shaped spacer and method of fabricating the same |
摘要 |
The present invention provides a semiconductor transistor using an L-shaped spacer and a method of fabricating the same. The semiconductor transistor includes a gate pattern formed on a semiconductor substrate and an L-shaped third spacer formed beside the gate pattern and having a horizontal protruding portion. An L-shaped fourth spacer is formed between the third spacer and the gate pattern, and between the third spacer and the substrate. A high-concentration junction area is positioned in the substrate beyond the third spacer, and a low-concentration junction area is positioned under the horizontal protruding portion of the third spacer. A medium-concentration junction area is positioned between the high- and low-concentration junction areas. A method of fabricating the semiconductor transistor includes a process, where the high- and medium- concentration junction areas are formed simultaneously by the same ion-implantation step and the substrate is annealed before forming the low-concentration junction area.
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申请公布号 |
US2004079976(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030728811 |
申请日期 |
2003.12.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE GEUM-JONG;LEE NAE-IN;RHEE HWA-SUNG;KO YOUNG-GUN;CHOE TAE-HEE;KIM SANG-SU |
分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L21/336;H01L29/76;H01L31/062 |
主分类号 |
H01L21/336 |
代理机构 |
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