发明名称 Chip-stack semiconductor device and manufacturing method of the same
摘要 In a chip-stack semiconductor device including multiple semiconductor chips vertically stacked on top of each other, each of the semiconductor chips includes multiple through electrodes connected to each other in regions inside of electrode pads derived from a device region, and each of the through electrodes links a front surface to a back surface of the semiconductor chip. This arrangement provides a chip-stack semiconductor device which can prevent the increase in the size of the device and resolve the difficulty of stacking multiple semiconductor chips on top of each other, both of which are the problems associated with the provision of a number of through electrodes.
申请公布号 US2004080013(A1) 申请公布日期 2004.04.29
申请号 US20030670194 申请日期 2003.09.26
申请人 SHARP KABUSHIKI KAISHA 发明人 KIMURA TOSHIO;DOTTA YOSHIHISA
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/68;H01L21/768;H01L23/48;H01L23/485;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L29/00 主分类号 H01L23/52
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