发明名称 |
Methods for manufacturing integrated circuit devices including an isolation region defining an active region area |
摘要 |
Integrated circuit devices including an isolation region are provided. The devices include an integrated circuit substrate and a trench in the integrated circuit substrate that defines an active region of the integrated circuit device. A silicon layer is provided on the integrated circuit substrate that extends over an edge of the trench and along an upper portion of a first sidewall of the trench. An insulating material is positioned adjacent the silicon layer that extends across some, or all, of the trench to define the isolation region. Methods of forming such integrated circuit devices are also provided.
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申请公布号 |
US2004080019(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030686421 |
申请日期 |
2003.10.15 |
申请人 |
OH YONG-CHUL;JIN GYO-YOUNG |
发明人 |
OH YONG-CHUL;JIN GYO-YOUNG |
分类号 |
H01L21/76;H01L21/762;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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地址 |
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