发明名称 |
Semiconductor device and manufacturing method thereof, electro optic device, liquid crystal display device, electronics device |
摘要 |
The present invention aims to manufacture a large size semiconductor device with the inter-substrate transcription technology of thin film circuits. Enlargement is enabled by disposing a plurality of second substrates (21) in a tile shape. As the second substrate (21), a print substrate or flexible print circuit having double-sided wiring or multilayer wiring is employed. The plurality of second substrates (21) is driven independently, and the plurality of second substrates (21) is made to mutually overlap, and a drive circuit (23) is disposed at such overlapping portion. Moreover, the plurality of second substrates (21) is made to mutually overlap, and the mutual circuits are connected at such overlapping portion.
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申请公布号 |
US2004080032(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030392191 |
申请日期 |
2003.03.20 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KIMURA MUTSUMI;INOUE SATOSHI;UTSUNOMIYA SUMIO;HARA HIROYUKI;MIYAZAWA WAKAO |
分类号 |
G02F1/1347;G02F1/1343;H01L21/20;H01L21/336;H01L21/68;H01L21/77;H01L21/84;H01L27/32;H01L29/786;H01L51/56;H05B33/10;(IPC1-7):H01L23/02 |
主分类号 |
G02F1/1347 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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