发明名称 METHOD FOR FABRICATING HALFTONE PHASE SHIFT BLANK MASK AND PHOTO MASK
摘要 PURPOSE: A method for fabricating a halftone phase shift blank mask and a photo mask is provided to reduce the thickness necessary for a phase shift layer of 180 degrees by forming a phase shift layer having a large refractive index. CONSTITUTION: A phase shift layer(20) is formed on a transparent substrate(10) by mixing argon gas and methane gas according to a predetermined ratio by using a MoSi target. A shielding layer(30) is formed on the phase shift layer(20) by mixing the argon gas, nitrogen gas, and the methane gas by using a chrome target. An anti-reflective layer(40) is formed on the shielding layer(30) by using the mixed gas of the argon gas, the nitrogen gas, and CO2 gas or the mixed gas of the argon gas, N2O gas, and NO gas. A resister layer(50) is formed on the anti-reflective layer.
申请公布号 KR20040035486(A) 申请公布日期 2004.04.29
申请号 KR20020064649 申请日期 2002.10.22
申请人 S&STECH CO., LTD. 发明人 NAM, GI SU
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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