发明名称 HIGH VOLTAGE ROW AND COLUMN DRIVER FOR PROGRAMMABLE RESISTANCE MEMORY
摘要 A driver circuit having one or more MOS transistors (T1-T9). The driver circuit is capable of providing an output voltage greater than the power supply voltage; however, the magnitude of the voltage appearing across the terminals of the MOS transistors (T1-T9)are preferably less than or equal to the magnitude of the power supply voltage. The driver circuit may comprise a plurality of serially coupled PMOS transistors (T3-T4) and a plurality of serially coupled NMOS transistors (T5-T6) wherein the plurality of PMOS transistors (T3-T4) and plurality of NMOS transistors (T5-T6) are coupled at the output node of the driver.
申请公布号 WO03094201(A3) 申请公布日期 2004.04.29
申请号 WO2003US12989 申请日期 2003.04.24
申请人 OVONYX,INC. 发明人 PARKINSON, WARD
分类号 G11C11/56;G11C16/02;G11C16/10 主分类号 G11C11/56
代理机构 代理人
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