发明名称 |
Connection structure for high-frequency circuit substrate, manufacturing method thereof and high frequency circuit device |
摘要 |
A connection structure is provided, which can perform an electrical connection between high-frequency circuit substrates in a manner of high workability and productivity. A connection structure comprises: a high-frequency transmission line lead frame connecting a first high-frequency transmission line formed on a first high-frequency circuit substrate to a second high-frequency transmission line formed on a second high-frequency circuit substrate; a plurality of GND electrode lead frames disposed in parallel to the high-frequency transmission line lead frame on both sides thereof, and providing a connection between a first GND electrode of the first high-frequency circuit substrate and a second GND electrode of the second high-frequency circuit substrate; and a reinforcing substrate integrally securing the high-frequency transmission line lead frame and a plurality of GND electrode lead frames.
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申请公布号 |
US2004080386(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030408236 |
申请日期 |
2003.04.08 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA. |
发明人 |
KITAMURA YOICHI;TAHARA YUKIHIRO;TSUMURA AKIRA |
分类号 |
H01R11/01;H01L23/12;H01P1/04;H01P3/08;H01P5/02;H05K1/02;H05K1/14;H05K3/34;(IPC1-7):H01P1/04 |
主分类号 |
H01R11/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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