SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT FABRICATING METHOD, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FABRICATING METHOD

摘要

A method of forming a bump electrode (300) on an electrode includes the steps of forming a ball bond on an IC electrode by a wire bonding apparatus, moving up a bonding capillary, moving the bonding capillary sideway and then downward, bonding an Au wire to the ball bond portion, and cutting the Au wire. The bump electrode (300) has a particular form, with a bump portion (40) having a vertex (7) at a first height above the electrode and a tail portion (50) extending from the bump portion (300) and having a vertex (52) at approximately the same height as the vertex of the bump portion (40). Both vertices have a flattened surface (31a).