发明名称 |
Ohmic contact configuration |
摘要 |
A contact configuration has an ohmic contact between a metalization layer and a semiconductor body of monocrystalline semiconductor material. An amorphous semiconductor layer is formed between the metalization layer and the monocrystalline semiconductor body. The layer is formed of the same semiconductor material as the body. The contact configuration is either produced by applying amorphous semiconductor material on the semiconductor body (e.g., sputtering, vapor deposition, glow discharge) or by damage formation in the semiconductor body.
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申请公布号 |
US2004080015(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030686849 |
申请日期 |
2003.10.16 |
申请人 |
MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT |
发明人 |
MAUDER ANTON;SCHULZE HANS-JOACHIM;STRACK HELMUT |
分类号 |
H01L29/24;H01L29/26;H01L29/417;H01L29/45;H01L29/739;H01L29/78;(IPC1-7):H01L29/00 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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