发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE CAPABLE OF REDUCING SEAM GENERATIONS |
摘要 |
The present invention is related to a method for fabricating a semiconductor device capable of preventing occurrences of void and seam phenomena caused by a negative slope of an insulation layer or a bowing profile phenomenon in a cross-sectioned etch profile of a contact hole. To achieve this effect, the attack barrier layer or the capping layer is additionally deposited on the profile containing self-aligned contact holes in order to prevent an undercut of the inter-layer insulation layer, which is a main cause of the seam generations. Also, the attack barrier layer has a function of preventing the inter-layer insulation layer from being attacked during the wet cleaning/etching process. Ultimately, it is possible to improve device characteristics with the prevention of the seam generations.
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申请公布号 |
US2004082162(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030607052 |
申请日期 |
2003.06.27 |
申请人 |
KANG HYEOK;LEE SUNG-KWON;LEE MIN-SUK |
发明人 |
KANG HYEOK;LEE SUNG-KWON;LEE MIN-SUK |
分类号 |
H01L21/00;H01L21/311;H01L21/3205;H01L21/4763;H01L21/60;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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