| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
The number of design processes for fabricating semiconductor devices can be reduced by parallel connection of a plurality of unit bipolar transistors Qu that are completely electrically isolated from each other in a semiconductor layer of an SOI substrate 1 to form a bipolar transistor having a large current capacity.
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| 申请公布号 |
US2004079996(A1) |
申请公布日期 |
2004.04.29 |
| 申请号 |
US20030688975 |
申请日期 |
2003.10.21 |
| 申请人 |
HITACHI, LTD. AND HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
TAMAKI YOICHI;IWASAKI TAKAYUKI;TSUJI KOUSUKE;KAMADA CHIYOSHI |
| 分类号 |
H01L21/331;H01L21/762;H01L21/8222;H01L21/84;H01L27/06;H01L27/12;H01L29/73;H01L29/732;(IPC1-7):H01L27/01;H01L31/039 |
主分类号 |
H01L21/331 |
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