发明名称 |
VERBINDUNG MIT NIEDRIGEM RC-WERT |
摘要 |
A semiconductor device is described having an interconnection pattern comprising a dielectric layer (21) bonded to a metal layer (22) through an intermediate bonding layer (23) formed by reaction of an adhesion promoter with the metal. The dielectric layer comprises a material selected from the group consisting of teflons, parylenes and silesquioxanes. By employing a low resistivity metal, such as copper and a low dielectric constant material a low RC delay interconnection pattern can be formed. <IMAGE> |
申请公布号 |
DE69631963(D1) |
申请公布日期 |
2004.04.29 |
申请号 |
DE1996631963 |
申请日期 |
1996.09.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YOU, LU;CHEUNG, W.;CHAN, S.;HUANG, J. |
分类号 |
H01L21/3205;H01L21/312;H01L21/768;H01L23/31;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L23/31 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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