| 摘要 |
A magnetic memory device includes a first wiring which runs in the first direction, a first metal layer which is arranged above the first wiring, a first magneto resistive effect element which is arranged in a predetermined region on the first metal layer, a first contact layer which is arranged on the first magneto resistive effect element, a second wiring which runs in the second direction different from the first direction, is arranged on the first contact layer, and has a projection that covers the top of the first contact layer, and a first insulating film which is buried around the first metal layer, first magneto resistive effect element, first contact layer, and second wiring, and has a surface flush with that of the second wiring.
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