发明名称 |
Deep trench isolation structure of a high-voltage device and method for forming thereof |
摘要 |
A deep trench isolation structure of a high-voltage device and a method of forming thereof. An epitaxial layer with a second type conductivity is formed on a semiconductor silicon substrate with a first type conductivity. A deep trench passes through the epitaxial layer. An ion diffusion region with the first type conductivity is formed in the epitaxial layer and surrounds the sidewall and bottom of the deep trench. An undoped polysilicon layer fills the deep trench.
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申请公布号 |
US2004082140(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030354130 |
申请日期 |
2003.01.30 |
申请人 |
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发明人 |
YANG JIA-WEI;LIAO CHIH-CHERNG |
分类号 |
H01L21/763;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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