发明名称 Semiconductor device and chip-stack semiconductor device
摘要 A semiconductor device has multiple power-supply through electrodes, grounding through electrodes, and signal-routing through electrodes made through a semiconductor chip. The power-supply through electrodes, the grounding through electrodes, and the signal-routing through electrodes differ mutually in cross-sectional area. Hence, a semiconductor device and a chip-stack semiconductor device are provided which are capable of preventing the electrodes' resistance from developing excessive voltage drop, heat, delay, and loss, and also from varying from one electrode to the other.
申请公布号 US2004080040(A1) 申请公布日期 2004.04.29
申请号 US20030670244 申请日期 2003.09.26
申请人 SHARP KABUSHIKI KAISHA 发明人 DOTTA YOSHIHISA;KIMURA TOSHIO
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L23/12;H01L23/31;H01L23/48;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/476 主分类号 H01L23/52
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