NON-DESTRUCTIVE ANALYSIS METHOD FOR DETERMINING THE QUALITY OF A SOLAR CELL, AND APPLICATION OF THE SAME

摘要

Known analysis methods do not enable a correlation to be identified between the structural properties of a semiconductor layer and the electrical properties of a solar cell mounted on the same. The inventive analysis method is based on rapid and non-destructive Raman spectroscopy by which means significant structural parameters (FWHM) relating to the structural properties of a processed absorber layer can be determined in a solar cell. The knowledge of such structural parameters enables a correlation to be established with electric parameters (Voc) which are relevant in terms of the expected electrical properties of the finished processed solar cell. A linear correlation is indicated between the parameters with a saturation region of satisfying electrical properties and a threshold value of a region of unsatisfying electrical properties of the solar cell. The inventive analysis method thus enables the electrical quality of the finished processed solar cell to be determined, exclusively from the structural parameters of the absorber layer. Accordingly, it can be decided in situ, in a production line for, for example, polycrystalline solar cells with heterojunctions, whether an absorber layer analysed ex situ can be reprocessed or must be extracted.