发明名称 CVD APPARATUS HAVING SHOWER HEAD FOR CONTROLLING DEPOSITION SPEED OF THIN FILM
摘要 PURPOSE: A CVD(Chemical Vapor Deposition) apparatus having a shower head for controlling a deposition speed of a thin film is provided to control the deposition speed by using radical and plasma. CONSTITUTION: A CVD apparatus having a shower head for controlling a deposition speed of a thin film includes a radical generator electrode plate(214), a reaction gas injection tube(202), a radical generator plate(218), a plasma generator electrode plate(224), a raw gas injection tube(206), and a plurality of radical induction tubes(219). The radical generator electrode plate(214) is installed at a bottom side of a top plate. The reaction gas injection tube(202) penetrates the top plate and the radical generator electrode plate. The radical generator plate(218) is installed at a predetermined position apart from the radical generator electrode plate to form a radical regenerator. The plasma generator electrode plate(224) is installed at a predetermined position apart from the radical generator plate to form a raw gas buffer. The raw gas injection tube(206) is used for supplying the raw gas to the raw gas buffer. The radical induction tubes(219) are used for supplying radicals to a top part of a heater within a chamber. A plurality of raw gas injection holes(229) are formed on the plasma generator electrode plate.
申请公布号 KR20040034907(A) 申请公布日期 2004.04.29
申请号 KR20020063554 申请日期 2002.10.17
申请人 DIGIWAVE TECHNOLOGIES INC. 发明人 CHO, IL HUI;CHOI, YEONG GIL;KANG, SEOK JUN;KIM, JAE HO;LEE, HO YEONG;PARK, EUN SEOK;PARK, SANG JUN;SHIN, IN CHEOL
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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