发明名称 Process for fabricating a semiconductor diffraction grating using a sacrificial layer
摘要 An optical device including a first semiconductor layer on which is deposited a dielectric layer that is patterned and etched to form dielectric strips that are part of a diffraction grating layer. A second semiconductor layer is grown on the first semiconductor layer between the dielectric strips to provide alternating dielectric sections and semiconductor sections. Via channels can be patterned and etched through the second semiconductor layer so that dielectric strips can be removed to form dielectric air channels.
申请公布号 US2004082152(A1) 申请公布日期 2004.04.29
申请号 US20030654315 申请日期 2003.09.03
申请人 NORTHROP GRUMMAN CORPORATION 发明人 NESNIDAL MICHAEL P.;FORBES DAVID V.
分类号 G02B6/13;G02B5/18;G02B6/122;G02B6/124;H01L21/20;H01S5/12;(IPC1-7):H01L21/20 主分类号 G02B6/13
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