发明名称 |
Method for reducing defect concentrations in crystals. |
摘要 |
A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal. <IMAGE> |
申请公布号 |
ZA200304563(B) |
申请公布日期 |
2004.04.29 |
申请号 |
ZA20030004563 |
申请日期 |
2003.06.11 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
MARK PHILIP D'EVELYN;LARRY BURTON ROWLAND;JOHN WILLIAM LUCEK;LIONEL MONTY LEVINSON;STEPHEN DALEY ARTHUR;SURESH SHANKARAPPA VAGARALI;THOMAS RICHARD ANTHONY |
分类号 |
C30B33/02;B01J3/06;C30B1/00;C30B33/00;H01L21/324 |
主分类号 |
C30B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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