发明名称 Method for reducing defect concentrations in crystals.
摘要 A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal. <IMAGE>
申请公布号 ZA200304563(B) 申请公布日期 2004.04.29
申请号 ZA20030004563 申请日期 2003.06.11
申请人 GENERAL ELECTRIC COMPANY 发明人 MARK PHILIP D'EVELYN;LARRY BURTON ROWLAND;JOHN WILLIAM LUCEK;LIONEL MONTY LEVINSON;STEPHEN DALEY ARTHUR;SURESH SHANKARAPPA VAGARALI;THOMAS RICHARD ANTHONY
分类号 C30B33/02;B01J3/06;C30B1/00;C30B33/00;H01L21/324 主分类号 C30B33/02
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